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IEEE Journal of Lightwave Technology
Volume 18 Number 1, January 2000

Table of Contents for this issue

Complete paper in PDF format

Fully Electrical 40-Gb/s TDM System Prototype Based on InP HEMT Digital IC Technologies

Mikio Yoneyama, Member, IEEE Yutaka Miyamoto, Member, IEEE Taiichi Otsuji, Member, IEEE, Member, OSA Hiromu Toba, Member, IEEE Yasuro Yamane, Member, IEEE Tadao Ishibashi and Hiroshi Miyazawa

Page 34.

Abstract:

This paper presents a fully electrical 40-Gb/s time-division-multiplexing (TDM) system prototype transmitter and receiver. The input and output interface of the prototype are four-channel 10-Gb/s signals. The prototype can be mounted on a 300-mm-height rack and offers stable 40-Gb/s operation with a single power supply voltage. InP high-electron mobility transistor (HEMT) digital IC's perform 40-Gb/s multiplexing/demultiplexing and regeneration. In the receiver prototype, unitraveling-carrier photodiode (UTC-PD) generates 1 Vpp output and directly drives the InP HEMT decision circuit (DEC) without any need for an electronic amplifier. A clock recovery circuit recovers a 40-GHz clock with jitter of 220 fs pp from a 40-Gb/s nonreturn-to-zero (NRZ) optical input. The tolerable dispersion range of the prototype within a 1-dB penalty from the receiver sensitivity at zero-dispersion is as wide as 95 ps/nm, and the clock phase margin is wider than 70° over almost all the tolerable dispersion range. A 100-km-long transmission experiment was performed using the prototype. A high receiver sensitivity [-25.1 dBm for NRZ ( 27-1) pseudorandom binary sequence (PRBS)] was obtained after the transmission. The 40-Gb/s regeneration of the InP DEC suppressed the deviation in sensitivity among output channels to only 0.3 dB. In addition, four-channel 40-Gb/s wavelength-division-multiplexing (WDM) transmission was successfully performed.

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