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IEEE Journal of Lightwave Technology
Volume 18 Number 3, March 2000

Table of Contents for this issue

Complete paper in PDF format

High-Efficiency Unitraveling-Carrier Photodiode with an Integrated Total-Reflection Mirror

Hiroshi Ito, Member, IEEE Tomofumi Furuta, Satoshi Kodama and Tadao Ishibashi Member, IEEE

Page 384.

Abstract:

A novel photodiode (PD) structure with an integrated total-reflection mirror which can enhance the quantum efficiency in back-illuminated geometry is proposed. Due to the diagonal propagation of the reflected light at the total-reflection mirror through the absorption layer, the efficiency is improved by about 50% from that of the normally irradiated case. By employing a unitraveling-carrier structure together with a thick absorption layer of 4700 A, the fabricated PD exhibits a high responsivity of 0.65 A/W, a high 3-dB bandwidth of 50 GHz,and a high-output voltage of 5 V, simultaneously.

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