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IEEE Microwave and Guided Wave Letters
Volume 9 Number 11, November 1999

Table of Contents for this issue

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High-Performance Double-Recessed InAlAs/InGaAs Power Metamorphic HEMT on GaAs Substrate

Der-Wei Tu, Senior Member, IEEE, Sujane Wang, J. S. M. Liu, K. C. Hwang, Wendell Kong, P. C. Chao, Senior Member, IEEE, and Kirby Nichols

Page 458.

Abstract:

Double-recess power metamorphic high electron mobility transistors (MHEMT's) on GaAs substrates were successfully demonstrated. The In.53Al.47As/In.65Al.35As structures exhibited extrinsic transconductance of 1050 mS/mm and breakdown of 8.3 V, which are comparable to that of the InP power HEMT. Excellent maximum power added efficiency (PAE) of 60.2% with output power of 0.45 W/mm and record associated power gain of 17.1 dB were realized at 20 GHz. A maximum output power of 0.51 W/mm has also been demonstrated with the device. This is the first demonstration of high-efficiency K-band power MHEMT's.

References

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