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IEEE Microwave and Guided Wave Letters
Volume 9 Number 12, December 1999

A Single-Chip Coplanar 0.8-µm GaAs MESFET K/Ka-Band DRO

Page 526.

Abstract:

This letter describes the design and measured results of a monolithic coplanar (CP) transmission line-based GaAs MESFET dielectric resonator oscillator (DRO) for K/Ka-band applications. The dielectric resonator (DR) is on chip. The measured output power was 11 dBm at 26.17 GHz for a conversion efficiency of 5.5%. The chip probed phase noise was -118.7 dBc at 1 MHz off carrier. This represents the first reported instance of a DRO being fabricated using a CP transmission line topology.

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