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IEEE Microwave and Guided Wave Letters
Volume 9 Number 12, December 1999

Table of Contents for this issue

Complete paper in PDF format

A 180-GHz Monolithic Sub-Harmonic InP-Based HEMT Diode Mixer

Yon-Lin Kok, Huei Wang, Senior Member, IEEE, Mike Barsky, Richard Lai, Member, IEEE, Mike Sholley, and Barry Allen, Member, IEEE

Page 529.

Abstract:

A 180-GHz monolithic subharmonic diode mixer is developed using 0.08-µm pseudomorphic InAlAs/InGaAs HEMT MMIC process on a 2-mil-thick InP substrate. This mixer demonstrates a conversion loss of better than 16.5 dB from 175 to 182 GHz with an LO drive of 13 dBm at 96 GHz. This is the first demonstration of a monolithic subharmonic HEMT diode mixer in this frequency range. The design and measurement of this monolithic microwave integrated circuit (MMIC) mixer and the waveguide-to-microstrip line transitions of the test-fixture are presented.

References

  1. S. A. Maas, Microwave Mixers, 2nd ed.Norwood, MA: Artech House, 1993.
  2. K. Itoh, A. Iida, Y. Sasaki, and S. Urasaki, "A 40 GHz band monolithic even harmonic mixer with an anti-parallel diode pair," in 1991 IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, pp. 879-882, Boston, MA, June 1991.
  3. R. Katz et al., "A Ka-band MMIC subharmonic mixer," in IEEE 1995 Microwave and Millimeter-Wave Monolithic Circuits Symp. Dig., Orlando, FL, May 1995, pp. 39-42.
  4. Y.-L. Kok, M. Ahmadi, H. Wang, B. Allen, and T.-S. Lin, "A Ka-band monolithic single-chip transceiver using sub-harmonic mixer," in 1998 IEEE MTT-S Int. Microwave Symp. Dig., Baltimore, MD, June 1998, vol. 1, pp. 309-312.
  5. Y.-L. Kok, P.-P. Huang, H. Wang, B. R. Allen, and R. Lai, M. Sholley, T. Gaier, and I. Mehdi, "120 and 60 GHz monolithic InP-based HEMT diode sub-harmonic mixer," in 1998 IEEE MTT-S Int. Microwave Symp. Dig., Baltimore, MD, June 1998, vol. 3, pp. 1723-1726.
  6. R. Lai, M. Barsky, T. Huang, M. Sholley, H. Wang, Y. L. Kok, D. C. Streit, T. Block, P. H. Liu, T. Gaier, and L. Samoska, "An InP HEMT LNA with 7.2-dB gain at 190 GHz," IEEE Microwave Guided Wave Lett., vol. 8, pp. 393-395, Nov. 1998.
  7. Y.-C. Shih, T.-N. Ton, and L. Q. Bui, "Waveguide-to-microstrip transitions for millimeter-wave applications," in 1988 IEEE MTT-S Int. Microwave Symp. Dig., pp. 473-475.
  8. P. P. Huang, T. W. Huang, H. Wang, E. Lin, Y. H. Shu, R. Lai, M. Biedenbender, and J. Elliot, "A W-band 0.35-W power amplifier module," IEEE Trans. Microwave Theory Tech., vol. 45, pt. 2, pp. 2418-2423, Dec. 1997.
  9. H. Wang, R. Lai, Y. L. Kok, T. W. Huang, M. V. Aust, Y. C. Chen, P. H. Siegel, T. Gaier, R. J. Dengler, and B. R. Allen, "A 155-GHz monolithic low noise amplifier," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 1660-1666, Nov. 1998.