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IEEE Microwave and Guided Wave Letters
Volume 10 Number 4, April 2000

Table of Contents for this issue

Complete paper in PDF format

A Si/SiGe HBT Dielectric Resonator Push-Push Oscillator at 58 GHz

Franz X. Sinnesbichler, Student Member, IEEE Bernhard Hautz and Gerhard R. Olbrich Member, IEEE

Page 145.

Abstract:

In this letter, we present a dielectric resonator push-push oscillator at 58 GHz. The microstrip circuit is fabricated in hybrid thin-film technology on a 10 mil Alumina substrate. Flip-chip bonded Si/SiGe HBT's are used as active devices. A maximum output power of - 8 dBm and a phase noise of -105 dBc/Hz at an offset frequency of 1 MHz have been measured. At a lower output power of -14 dBm an optimum phase noise of -112 dBc/Hz has been achieved. The mechanical tuning range of the oscillator is approximately 500 MHz.

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