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IEEE Microwave and Guided Wave Letters
Volume 10 Number 8, August 2000

Table of Contents for this issue

Complete paper in PDF format

New Non-Quasi-Static Theory for Extracting Small-Signal Parameters Applied to LDMOSFETs

Patrick Roblin, Siraj Akhtar and Jeffrey Strahler

Page 322.

Abstract:

We present analytic formulas for simultaneously extracting the parasitic resistances, inductances, and the intrinsic parameters of a small-signal FET equivalent circuit model including the non-quasi-static (NQS) charging time-constants associated with the gate and drain charges, respectively. For the NQS equivalent circuit topology considered, there exists a continuum of solutions for the circuit parameters, as a function of the source resistance,giving exactly the same frequency response fit. A multi-bias analysis is used to determine the final source resistance. Realistic results are obtained for power LDMOSFETs despite the very small value of the parasitics in these power RF devices.

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