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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 1, January 2000

Intermodulation Distortion in Pseudomorphic HEMT's and an Extension of the Classical Theory

Page 104.

Abstract:

Pseudomorphic high electron-mobility transistors (pHEMT's) offer superior RF and microwave performance and, in particular, exhibit exceptional intermodulation distortion characteristics that are not adequately modeled by the classical theory. Intermodulation products are typically 8-10 dB below classical expectations, and can be as much as 12 dB lower. An extension of the classical theory is presented, which allows for a better understanding of this phenomenon in terms of the device transconductance characteristic. Experimental data is included to provide quantitative verification based on both device and amplifier results. pHEMT-based devices have the potential to satisfy the spectral performance requirements of today's wireless systems with improved dc-to-RF efficiencies.

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