2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 3, March 2000

Table of Contents for this issue

Complete paper in PDF format

A L arge-Signal Switching MESFET Model for Intermodulation Distortion Analysis

Kohei Fujii, Yasuhiko Hara, Toshiyuki Yakabe, Member, IEEE and Hatsuo Yabe Member, IEEE

Page 431.

Abstract:

This paper describes an improved large-signal model for predicting an intermodulation distortion (IMD) power characteristic of MESFET's in switching applications. The model is capable of modeling the voltage-dependent drain current and its derivatives, including gate-source and gate-drain capacitors. The drain current and its derivatives are described by a function of a voltage-dependent drain conductance. The model parameters are extracted from a measured drain conductance versus gate voltage characteristic of an MESFET. This paper also presents a new fully symmetric equivalent circuit for switching MESFET's. The IMD power characteristics calculated with the use of the proposed method are compared with experimental data taken from a monolithic-microwave integrated-circuit single-pole double-throw switch. Good agreements over the large gate voltages and input power levels are observed.

References

  1. J. A. Pla and W. Struble,"Nonlinear model for predicting intermodulation distortion in GaAs FET RF switch devices", in IEEE MTT-S Int. Microwave Symp. Dig. , 1993, pp.  641-644. 
  2. R. S. Virk and S. A. Mass,"Modeling MESFET's for intermodulation analysis in RF switches", IEEE Microwave Guided Wave Lett., vol. 4, pp.  376-378,  Nov.  1994.
  3. S. A. Maas and D. Neilson,"Modeling MESFET's for intermodulation analysis of mixers and amplifiers", IEEE Trans. Microwave Theory Tech., vol. 38 , pp.  1964-1971, Dec.  1990.
  4. G. Dambrine et al.,"A new method for determining the FET small-signal equivalent circuit", IEEE Trans. Microwave Theory Tech., vol. 36, pp.  1152-1159, July  1988.
  5. J. M. Golio, GASMAP Gallium Arsenide Model Analysis Programs Software and User's Manual , Norwood, MA: Artech House, 1991.
  6. W. R. Curtice,"A MESFET model for use in the design of GaAs integrated circuits", IEEE Trans. Microwave Theory Tech., vol. MTT-28 , pp.  448-455, May  1980.
  7. A. Materka and T. Kacprazak,"Computer calculation of large-signal GaAs FET amplifier characteristics", IEEE Trans. Microwave Theory Tech., vol. MTT-33, pp.  129-135, Feb.  1985.
  8. A. McCamant, G. McCormac and D. Smith,"An improved GaAs FET device and circuit simulation in SPICE", IEEE Trans. Microwave Theory Tech., vol. 38, pp.  822-824, June  1990.
  9. W. R. Curtice and M. Ettenberg,"A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers", IEEE Trans. Microwave Theory Tech., vol. 40, pp.  258-2266 , Dec.  1992.
  10. I. Angelov, H. Zerbert and N. Rorsman,"A new empirical nonlinear model for HEMT and MESFET devices", IEEE Trans. Microwave Theory Tech., vol. MTT-33 , pp.  129-135, Feb.  1985.
  11. S. M. Sze, Physics of Semiconductor Devices, New York: Wiley, 1969.
  12. T.-H. Chen and M. S. Shur,"A capacitance model for GaAs MESFET's", IEEE Trans. Electron Devices, vol. ED-12, pp.  883-891, May  1985 .