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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 4, April 2000

Table of Contents for this issue

Complete paper in PDF format

Recent Advances in the Performance of InP Gunn Devices and GaAs TUNNETT Diodes for the 100-300-GHz Frequency Range and Above

Heribert Eisele, Member, IEEE Anders Rydberg, Member, IEEE and George I. Haddad Life Fellow, IEEE

Page 626.

Abstract:

Improved heat dissipation in InP Gunn devices resulted in RF power levels exceeding 200, 130, 80, and 25 mW at oscillation frequencies of around 103, 132, 152, and 162 GHz, respectively. Corresponding dc-to-RF conversion efficiencies exceeded 2.3% from 102 to 132 GHz. Power combining increased the available RF power levels to over 300 mW at 106 GHz, around 130 mW at 136 GHz, and more than 125 mW at 152 GHz with corresponding combining efficiencies from 80% to over 100%. Operation in a second harmonic mode yielded RF power levels of more than 3.5 mW at 214 GHz, over 2 mW around 220 GHz as well as over 1 mW around 280, 300, and 315 GHz. RF power levels exceeding 10 mW at 202 GHz, 9 mW around 210 GHz, and 4 mW around 235 GHz were obtained from GaAs TUNNETT diodes in a second harmonic mode as well. Corresponding dc-to-RF conversion efficiencies were around 1% at 202 and 210 GHz.

References

  1. A. V. Räisäinen, "Frequency multipliers for millimeter and submillimeter wavelengths", Proc. IEEE, vol. 80, pp.  1842-1852, Nov.  1992.
  2. T. W. Crowe, T. C. Grein, R. Zimmermann and P. Zimmermann, "Progress toward solid-state local oscillators at 1 THz", IEEE Microwave Guided Wave Lett., vol. 6, pp.  207-208,  May  1996.
  3. I. Mehdi, P. H. Siegel, D. A. Humphrey, T. H. Lee, R. J. Dengler, J. E. Oswald, A. Pease, R. Lin, H. Eisele, R. Zimmermann and N. Erickson, "An all solid-state 640 GHz subharmonic mixer", in IEEE MTT-S Int. Microwave Symp. Dig., Baltimore, MD, June 7-12 1998, pp.  403-406. 
  4. R. Kamoua, H. Eisele and G. I. Haddad, "D -band (110-170 GHz) InP Gunn devices", Solid State Electron., vol. 36, pp.  1547-1555, 1993.
  5. H. Eisele, R. Kamoua, G. I. Haddad and C. Kidner, "Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter-wave frequencies", Arch. Elektrotech. , vol. 77, pp.  15-19, 1994.
  6. H. Eisele, "Selective etching technology for 94-GHz GaAs IMPATT diodes on diamond heat sinks", Solid State Electron., vol. 32, pp.  253-257, 1989.
  7. H. Eisele and G. I. Haddad, "Enhanced performance in GaAs TUNNETT diode oscillators above 100 GHz through diamond heat sinking and power combining", IEEE Trans. Microwave Theory Tech., vol. 42, pp.  2498-2503, Dec.  1994.
  8. H. Eisele and G. I. Haddad, "Two-terminal millimeter-wave sources", IEEE Trans. Microwave Theory Tech., vol. 46, pp.  739-746, June  1998.
  9. H. Eisele and G. I. Haddad, "Active microwave diodes,"in Modern Semiconductor Device Physics, S. M. Sze, Ed. New York: Wiley, 1997, ch. 6, pp.  343-407. 
  10. H. Eisele and G. I. Haddad, "High-performance InP Gunn devices for fundamental-mode operation in D -band (110-170 GHz)", IEEE Microwave Guided Wave Lett., vol. 5, pp.  385-387, Nov.  1995.
  11. H. Eisele, G. O. Munns and G. I. Haddad, "RF performance characteristics of InP millimeter-wave n+ -n--n + Gunn devices", in IEEE MTT-S Int. Microwave Symp. Dig. , Denver, CO, June 17-21 1997, pp.  451-454. 
  12. H. Eisele and G. I. Haddad, "D -band InP Gunn devices with second-harmonic power extraction up to 290 GHz", Electron. Lett., vol. 30, pp.  1950-1951, 1994.
  13. H. Eisele and G. I. Haddad, "Efficient power combining with D -band (110-170 GHz) InP Gunn devices in fundamental-mode operation", IEEE Microwave Guided Wave Lett., vol. 8, pp.  24-26, Jan.  1998.
  14. H. Eisele and G. I. Haddad, "GaAs TUNNETT diodes on diamond heat sinks for 100 GHz and above", IEEE Trans. Microwave Theory Tech., vol. 43, pp.  210-213, Jan.  1995.
  15. N. R. Erickson and J. Tuovinen, "A waveguide tripler for 720-880 GHz", in Proc. 6th Int. Space Terahertz Technol. Symp., Pasadena, CA, Mar. 21-23 1995, pp.  191- 198. 
  16. H. Eisele, "Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200 GHz", Electron. Lett., vol. 34, pp.  1324-1326,  1998.
  17. H. Eisele, "Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200 GHz", Electron. Lett., vol. 34, p.  1531, 1998.
  18. I. G. Eddison, "Indium phosphide and gallium arsenide transferred-electron devices,"in Infrared and Millimeter Waves, New York: Academic, 1984,vol. 11, pp.  1-59. 
  19. J. E. Carlstrom, R. L. Plambeck and D. D. Thornton, "A continuously tunable 65-115-GHz Gunn oscillator", IEEE Trans. Microwave Theory Tech., vol. 33, pp.  610-619, July  1985.
  20. A. Rydberg, "High efficiency and output power from second-and third-harmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHz", IEEE Electron Device Lett., vol. 11, pp.  439 -441, Oct.  1990.
  21. A. Rydberg, "A contribution to the design of wide-band tunable second-harmonic mode millimeter-wave InP-TED oscillators above 110 GHz", Int. J. Infrared Millim. Waves, vol. 11, pp.  383-404,  1990.
  22. M. A. di Forte-Poisson, C. Brylinski, G. Colomer, D. Osselin, S. Hersee, J. P. Duchemin, F. Azan, D. Lechevallier and J. Lacombe, "High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz", Electron. Lett., vol. 20, pp.  1061-1062, 1984.
  23. H. Eisele, "Second-harmonic power extraction from InP Gunn devices with more than 1 mW in the 260-320 GHz frequency range", Electron. Lett., vol. 34, pp.  2412-2413, 1998.
  24. M. R. Friscourt and P. A. Rolland, "Optimum design of n+-n-n+ InP devices in the millimeter-range frequency limitation-RF performances", IEEE Electron Device Lett., vol. EDL-4, pp.  135-137, May  1983.
  25. R. Kamoua, "Potential of second-harmonic power generation in InP Gunn oscillators above 200 GHz", in Proc. 4th Int. Millimeter Submillimeter Waves Applicat. Conf., San Diego, CA, July 20-24 1998, pp.  32-37. 
  26. T. Ishibashi and M. Ohmori, "200-GHz 50-mW CW oscillation with silicon SDR IMPATT diodes", IEEE Trans. Microwave Theory Tech., vol. MTT-24, pp.  858-859, Nov.  1976.
  27. K. Chang, W. F. Thrower and G. M. Hayashibara, "Millimeter-wave silicon IMPATT sources and combiners for the 110-260-GHz range", IEEE Trans. Microwave Theory Tech., vol. MTT-29, pp.  1278-1284, December  1981.
  28. M. Ino, T. Ishibashi and M. Ohmori, "CW oscillation with p+ -p-n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands", Electron. Lett., vol. 12, pp.  148-149, 1976.
  29. T. Ishibashi, M. Ino, T. Makimura and M. Ohmori, "Liquid-nitrogen-cooled submillimeter-wave silicon IMPATT diodes", Electron. Lett., vol. 13, pp.  299-300, 1977.