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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 4, April 2000

Comparison of Modulated Impurity-Concentration InP Transferred Electron Devices for Power Generation at Frequencies Above 130 GHz

Page 719.

Abstract:

In this paper, InP transferred electron devices of various doping profiles have been theoretically investigated for fundamental-and harmonic-mode operation at frequencies up to 260 GHz. The results are based on an efficient and accurate hydrodynamic simulator,which analyzes the device under both conditions: impressed terminal voltage and realistic load impedances. In comparison with state-of-the-art graded profile diodes, improved performance is demonstrated for modulated impurity-concentration devices for both modes of operation.

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