2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 6, June 2000

High-Isolation CPW MEMS Shunt Switches-Part 2: Design

Page 1053.

Abstract:

In this paper, the second of two parts, the equivalent RLC model of the shunt switch is used in the design of tuned two-and four-bridge"cross"switches from 10 to 40 GHz. The cross switch attained an insertion loss of less than 0.3-0.6 dB,a return loss below -20 dB from 22 to 38 GHz in the up state, and a down-state isolation of 45-50 dB with only 1.5 pF of down-state capacitance (C_d). Also,an X-band microelectromechanical system (MEMS) switch with an insertion loss of less than 0.2 dB and an isolation of 35 dB is presented. This is done by inductively tuning the LC series resonance of the shunt switch. The MEMS bridge height is 1.5-2.5 µm, resulting in a pull-down voltage of 15-25 V. Application areas are in low-loss high-isolation communication and radar switches.

References

1. H. A. Atwater, "Circuit design of the loaded-line phase shifter", IEEE Trans. Microwave Theory Tech., vol. MTT-33, pp.  626-634, July  1985.
2. J. B. Muldavin, and G. M. Rebeiz, "High isolation MEMS shunt switches-Part1: Modeling", IEEE Trans. Microwave Theory Tech., vol. 48, pp. 1045-1052, June 1999.
3. R. B. Marks, "A multiline method of network analyzer calibration", IEEE Trans. Microwave Theory Tech., vol. 39, pp.  1205-1215, July  1991.