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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 8, August 2000

Table of Contents for this issue

Complete paper in PDF format

HEMT-HBT Matrix Amplifier

Claudio Paoloni

Page 1308.

Abstract:

A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMT's) and heterojunction bipolar transistors (HBT's) is proposed in this paper. The amplifier includes HEMT's in the first tier and HBT's in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT matrix amplifier presents a notable lower dc power consumption without remarkable gain and bandwidth reduction, maintaining the advantage of using HEMT's in the first tier. A theory to demonstrate that the amplifier performance can be optimize if the HBT's in the second tier are properly chosen is also proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix amplifier, and HBT matrix amplifier is also presented.

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