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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 12, December 2000

Table of Contents for this issue

Complete paper in PDF format

Compact InP-Based HBT VCOs with a Wide Tuning Range at W-and D-Band

Yves Baeyens, Member, IEEE Claus Dorschky, Nils Weimann, Member, IEEE Qinghung Lee, Rose Kopf, George Georgiou, John-Paul Mattia, Robert Hamm and Young-Kai Chen Fellow, IEEE

Page 2403.

Abstract:

Compact monolithic integrated differential voltage-controlled oscillators (VCOs) operating in W-band were realized using InP-based heterojunction bipolar transistors (HBTs). The oscillators,with a total chip size of 0.6 by 0.35 mm2,are based on a balanced Colpitts-type topology with a coplanar transmission-line resonator. By varying the voltage across the base-collector junction of the HBT in the current mirror and by changing the current in the VCO, the oscillation frequency can be tuned between 84 and 106 GHz. At 100 GHz, a differential voltage swing of 400 mV is obtained, which should be sufficient to drive 100-Gb/s digital logic. By combining the balanced outputs of a similar differential VCO in a push-push configuration, a compact source with close to -10 dBm output power and a tuning range between 138 and 150 GHz is obtained.

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