2000 IEEE.
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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 12, December 2000
Table of Contents for this issue
Complete paper in PDF format
Compact InP-Based HBT VCOs
with a Wide Tuning Range at W-and
D-Band
Yves Baeyens, Member, IEEE Claus Dorschky, Nils Weimann, Member, IEEE Qinghung Lee, Rose Kopf, George Georgiou, John-Paul Mattia, Robert Hamm and Young-Kai Chen Fellow, IEEE
Page 2403.
Abstract:
Compact monolithic integrated differential voltage-controlled
oscillators (VCOs) operating in W-band were
realized using InP-based heterojunction bipolar transistors (HBTs). The oscillators,with a total chip size of 0.6 by 0.35 mm2,are based on a balanced Colpitts-type topology with a coplanar transmission-line
resonator. By varying the voltage across the base-collector junction
of the HBT in the current mirror and by changing the current in the VCO, the
oscillation frequency can be tuned between 84 and 106 GHz. At 100 GHz, a differential
voltage swing of 400 mV is obtained, which should be sufficient to drive 100-Gb/s
digital logic. By combining the balanced outputs of a similar differential
VCO in a push-push configuration, a compact source with close to
-10 dBm output power and a tuning range between 138
and 150 GHz is obtained.
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