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IEEE Microwave and Guided Wave Letters
Volume 9 Number 12, December 1999

98-GHz InP/InGaAs HBT Amplifier with 26-dB Gain

Page 523.

Abstract:

In this letter the design and characterization of an InP/InGaAs single heterojunction bipolar transistor (HBT) W-Band amplifier is described. The amplifier achieves 26-dB gain at 98 GHz with a bandwidth of 3.1 GHz. On-wafer S-parameter and gain compression measurements are presented. The goal was to explore high gain HBT-amplifiers around 100 GHz. No comparable HBT amplifier at these frequencies could be found in literature.

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