2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

IEEE Microwave and Guided Wave Letters
Volume 10 Number 1, January 2000

Table of Contents for this issue

Complete paper in PDF format

High-Power GaN MESFET on Sapphire Substrate

C. Gaquiere, S. Trassaert, B. Boudart and Y. Crosnier

Page 19.

Abstract:

The first power results of GaN MESFET achieved at 2 GHz are presented. A power density of 2.2 W/mm has been obtained with an associated power-added efficiency of 27% at Vds = 30 V and Vgs = -2 V. These results represent a significant improvement over similar MESFET's or HFET's grown on GaAs or InP substrates.

References

  1. M. S. Shur, "GaN based transistors for high power applications", Solid State Electron., vol. 42, no. 12, pp.  2131-2138, 1998 .
  2. K. Chu, J. A. Smart, R. Shealy and L. Eastman, "AlGaN/GaN piezoelectric HEMT's with submicron gates on sapphire", in Electrochemical Society Proc., vol. 98, Pennington, NJ, 1998, pp.  46- 51. 
  3. G. J. Sullivan, M. Y. Chen, J. A. Higgins, J. W. Yang, Q. Chen, R. L. Pierson and B. T. McDermott, "High power 10 GHz operation of AlGaN HFET's on insulating SiC", IEEE Electron Device Lett., vol. 19, pp.  198-199, June  1998.
  4. Y. F. Wu, B. J. Thibeault, B. P. Keller, S. Keller, S. P. Denbaars and U. K. Mishra, "3 Watt AlGaN/GaN HEMT's on sapphire substrates with thermal management by flip-chip bonding", in Proc. DRC , Charlottesville, VA, June 1998, pp.  118-119. 
  5. S. Trassaert, B. Boudart, C. Gaquiere, D. Theron, Y. Crosnier, F. Huet and M. A. Poisson, "Trap effects studies in GaN MESFET's by pulsed measurements", Electron. Lett., vol. 35, no. 16, pp.  1386-1387, Aug.  1999.