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IEEE Microwave and Guided Wave Letters
Volume 10 Number 4, April 2000

Substrate Crosstalk Suppression Capability of Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI)

Page 134.

Abstract:

Experimental s₂₁ transmission crosstalk studies have been conducted on silicon-on-insulator substrates with buried ground planes (GPSOI's) where a 2 per square metal-silicide buried ground plane existed between a 15 -cm p-type silicon substrate and a 1 µm thick buried CVD oxide layer. Locally grounded transmission test structures fabricated on GPSOI were found to exhibit 20 dB increased crosstalk suppression compared to published data for high resistivity (200 -cm) SOI substrates incorporating capacitive guard rings over a frequency range from 500 MHz to 50 GHz. This represents an order of magnitude improvement in crosstalk power suppression capability compared to existing state-of-the-art suppression techniques in silicon substrates.

References

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