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IEEE Microwave and Guided Wave Letters
Volume 10 Number 6, June 2000

Table of Contents for this issue

Complete paper in PDF format

Low-Voltage C-Band SiBJT Single-Chip Receiver MMIC Based on Si 3-D MMIC Technology

Kenjiro Nishikawa, Member, IEEE Kenji Kamogawa, Member, IEEE Tadao Nakagawa and Masayoshi Tanaka Member, IEEE

Page 248.

Abstract:

This letter demonstrates a C-band Si BJT MMIC single-chip receiver based on the masterslice 3-D MMIC technology. The fabricated receiver MMIC on a chip of 1.8 mm by 1.8 mm integrates a low-noise amplifier, an image-rejection mixer, and an IF hybrid associated with an IF amplifier. The fabricated components on the chip are designed by using reactive matching method due to both broadband and low-voltage operation. The receiver MMIC achieves a conversion gain of 13.5 dB, a noise figure of 5.2 dB, and an image rejection ratio of 30.6 dB at 5.2 GHz. This receiver also has a flat gain characteristic in the C-band. The power consumption of this MMIC is 115 mW with 2 V collector supply voltage.

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