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IEEE Microwave and Guided Wave Letters
Volume 10 Number 7, July 2000

Table of Contents for this issue

Complete paper in PDF format

A Broadband and Miniaturized V-Band PHEMT Frequency D oubler

Belinda Piernas, Hitoshi Hayashi, Kenjiro Nishikawa, Kenji Kamogawa and Tadao Nakagawa

Page 276.

Abstract:

In this letter, we present the design and measured performances of a Ka-band frequency doubler fabricated using 0.15µm GaAs pseudomorphic HEMT transistors and the three-dimensional (3-D) MMIC technology. Thank to the use of an improved 180° rat-race hybrid, the frequency doubler exhibits high spectral purity over a large bandwidth. Isolation better than 30 dB is achieved on a frequency range from 31.7-36 GHz and fundamental frequency rejection better than 35 dB is achieved between 31.5 GHz and 37.5 GHz. Conversion loss measured at 32.5 GHz is 8.5 dB for an input power of 14 dBm. Both the broadband spectral purity and the small size of 1 mm2 make it suitable for the realization of high-quality and widely tunable V-band frequency sources. For the future developments of millimeter-wave wireless communication systems, it offers good perspectives toward the fabrication of single-chip V-band transceiver including the frequency source.

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