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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 2, February 2000

A Plastic Package GaAs MESFET 5.8-GHz Receiver Front-End with On-Chip Matching for ETC System

Page 209.

Abstract:

A plastic package GaAs MESFET receiver front-end monolithic microwave integrated circuit operating at 5.8 GHz is presented in this paper. It has a two-stage low-noise amplifier followed by a dual-gate mixer. Operating at 3 V and 8.3 mA, a conversion gain of 20.4 dB, noise figure of 4.1 dB, and high port-to-port isolations have been achieved. Total chip size of 1.0 × 0.9 mm² has been achieved through on-chip matching for both RF and local-oscillator ports and the use of simple two-element matching networks for all interstage matching. The 3-dB bandwidth of conversion gain is 1 GHz.

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