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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 3, March 2000

Table of Contents for this issue

Complete paper in PDF format

A Simplified Broad-Band Large-Signal Nonquasi-Static Table-Based FET Model

Mónica Fernández-Barciela, Associate Member, IEEE Paul J. Tasker, Yolanda Campos-Roca, Markus Demmler, Member, IEEE Hermann Massler, Enrique Sánchez, Member, IEEE M. Carmen Currás-Francos and Michael Schlechtweg Member, IEEE

Page 395.

Abstract:

In this paper, a simplified nonquasi-static table-based approach is developed for high-frequency broad-band large-signal field-effect-transistor modeling. As well as low-frequency dispersion, the quadratic frequency dependency of the y-parameters at high frequencies is taken into account through the use of linear delays. This model is suitable for applications related with nonlinear microwave computer-aided design and can be both easily extracted from dc and s-parameter measurements and implemented in commercially available simulation tools. Model formulation, small-signal, and large-signal validation will be described in this paper. Excellent results are obtained from dc up to the device fT frequencies, even when fT is as high as 100 GHz.

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