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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 3, March 2000

Table of Contents for this issue

Complete paper in PDF format

A Semianalytical Parameter Extraction of a SPICE BSIM3v3 for RF MOSFET's Using S-Parameters

Seonghearn Lee, Member, IEEE and Hyun Kyu Yu Member, IEEE

Page 412.

Abstract:

In this paper, we present a new parameter-extraction method combining analytical and optimization approaches for the RF large-signal Berkeley Short-Channel IGFET Model 3, Version 3.0. Using S-parameters of MOSFET's with different channel lengths and widths at zero gate bias, all overlap capacitances are accurately determined in the high-frequency range. The junction-capacitance model parameters are extracted using S-parameters of devices with different perimeter-to-area ratios at two different biases of zero and high voltages. A robust technique utilizing simple Z-parameter equations is also used to extract resistances (Rg and Rd) and inductances. The source and substrate resistances are initially determined using the zero-bias optimization, and their uncertainties are subsequently eliminated in the normal-bias optimization. Good agreements between measured and modeled S-parameters from 0.5 to 12 GHz demonstrate the validity of this semianalytical method.

References

  1. N. Camilleri, J. Costa, D. Lovelace and D. Ngo,"Silicon MOSFET's, the microwave device technology for the 90's", in IEEE MTT-S Int. Microwave Symp. Dig., 1993 , pp.  545-548. 
  2. " BSIM3v3 Manual", Univ. California Berkeley, Berkeley, CA, 1995.
  3. Y. Cheng, M. C. Jeng, Z. Liu, J. Huang, M. Chan, P. K. Ko and C. Hu,"A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation", IEEE Trans. Electron Devices, vol. 44, pp.  277- 285, Feb.  1997.
  4. M. C. Ho, K. Green, R. Culbertson, J. Y. Yang, D. Ladwig and P. Ehnis,"A physical large signal Si MOSFET model for RF circuit design", in IEEE MTT-S Int. Microwave Symp. Dig. , 1997, pp.  391-394. 
  5. W. Liu, R. Gharpurey, M. C. Chang, U. Erdogan, R. Aggarwal and J. P. Mattia, "RF MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model", in IEEE Int. Electron Devices Meeting Tech. Dig., 1997, pp.  309-312. 
  6. S. E. Laux,"Accuracy of an effective channel length/external resistance extraction algorithm for MOSFET's", IEEE Trans. Electron Devices, vol. ED-31, pp.  1245-1251, Sept.  1984.
  7. J. Costa, D. Lovelace, D. Ngo and N. Camilleri,"Modeling a new generation of RF devices: MOSFET's for L -band applications", in IEEE MTT-S Int. Microwave Symp. Dig., 1993, pp.  293-296. 
  8. " UTMOST III Extraction Manual", Silvaco Int., Santa Clara, CA, 1997.
  9. S. Lee, H. K. Yu, C. S. Kim, J. G. Koo and K. S. Nam,"A novel approach to extracting small-signal model parameters of silicon MOSFETs", IEEE Microwave Guided Wave Lett., vol.  7, pp.  75-77, Mar.  1997.
  10. S. Lee and H. K. Yu,"Parameter extraction technique for the small-signal equivalent circuit model of microwave silicon MOSFETs", in Proc. IEEE/Cornell Conf. Advanced Concepts High Speed Semiconduct. Devices Circuits, 1997 , pp.  182-191. 
  11. J. P. Raskin, G. Dambrine and R. Gillon,"Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFET's", IEEE Microwave Guided Wave Lett., vol. 7, pp.  408- 410, Dec.  1997.
  12. C. E. Biber, M. L. Schmatz, T. Morf, U. Lott and W. Bachtold,"A nonlinear microwave MOSFET model for spice simulators", IEEE Trans. Microwave Theory Tech., vol. 46, pp.  604-610, May  1998.
  13. C. S. Kim, H. K. Yu, H. Cho, S. Lee and K. S. Nam,"CMOS layout and bias optimization for RF IC design applications", in IEEE MTT-S Int. Microwave Symp. Dig., 1997 , pp.  945-948. 
  14. R. R. J. Vanoppen, J. A. M. Geelen and D. B. M. Klaassen,"The high-frequency analogue performance of MOSFETs", in IEEE Int. Electron Devices Meeting Tech. Dig., 1994, pp.  173-176. 
  15. Y.-J. Chan, C.-H. Huang, C.-C. Weng and B.-K. Liew,"Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model", IEEE Trans. Microwave Theory Tech., vol. 46, pp.  611-615, May  1998.
  16. G. Dambrine, A. Cappy, F. Heriodore and E. Playez,"A new method for determining the FET small-signal equivalent circuit", IEEE Trans. Microwave Theory Tech., vol. 36 , pp.  1151-1159, July  1988.
  17. D. Lovelace, J. Costa and N. Camilleri,"Extracting small-signal model parameters of silicon MOSFET transistors", in IEEE MTT-S Int. Microwave Symp. Dig. , 1994, pp.  865-868.