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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 3, March 2000

A Simplified Procedure to Calculate the Power Gain Definitions of FET's

Page 470.

Abstract:

A graphical method to easily derive the power gain definitions of field-effect transistors (FET's) is proposed in this paper. This method is applicable to MESFET's and high electron-mobility transistors described by the typical -model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains. The accuracy of this approach has been proven by comparison with simulations of the FET complete model.

References

1. G. D. Vendelin, Design of Amplifiers and Oscillators by the S -Parameter Method, New York : Wiley, 1982.
2. C. Paoloni and S. D'Agostino,"An approach to distributed amplifier based on a design-oriented FET model", IEEE Trans. Microwave Theory Tech., vol. 43, pp.  272-277, Feb.  1995.