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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 5, May 2000

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A Low-Current and Low-Distortion Wide-Band Amplifier Using 0.2-µm Gate MODFET Fabricated by Using Phase-Shift Lithography

Hidetoshi Ishida, Member, IEEE Kazuo Miyatsuji, Member, IEEE Tsuyoshi Tanaka, Member, IEEE Hiroshi Takenaka, Member, IEEE Hidetoshi Furukawa, Mitsuru Nishitsuji, Akiyoshi Tamura and Daisuke Ueda Member, IEEE

Page 771.

Abstract:

We have developed a wide-band amplifier that can keep a gain over 10 dB at an operation current of 10 mA from 100 MHz to 3 GHz. The fabricated integrated circuit (IC) achieved a high-output third-order intercept point of 30 dBm and low noise figure of 1.6 dB at 800 MHz, respectively. The present IC employs a MODFET with 0.2-µm gate fabricated by using a phase-shift lithography technique.

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