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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 8, August 2000

Table of Contents for this issue

Complete paper in PDF format

A Low-Power GaAs Front-End IC with Current-Reuse Configuration Using 0.15-µm-Gate MODFET's

Hidetoshi Ishida, Member, IEEE Haruhiko Koizumi, Member, IEEE Kazuo Miyatsuji, Member, IEEE Hiroshi Takenaka, Member, IEEE Tsuyoshi Tanaka, Member, IEEE and Daisuke Ueda Member, IEEE

Page 1303.

Abstract:

We have developed a novel current-reuse configuration of a front-end integrated circuit (IC), where the current can be reused in the whole circuit blocks that are a low-noise amplifier, local amplifier, and mixer. The power dissipation of the front-end IC is reduced by the factor of three as compared to conventional front-end IC's. Excellent RF performance such as conversion gain of 30 dB and noise figure of 1.6 dB at 1.5 GHz is attained under the conditions of the supply voltage and current of 3.6 V and 3 mA, respectively.

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