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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 8, August 2000

Table of Contents for this issue

Complete paper in PDF format

Design an d Performance of a Ka-Band Monolithic Phase Shifter Utilizing Nonresonant FET Switches

Kenichi Maruhashi, Member, IEEE Hiroshi Mizutani, Member, IEEE and Keiichi Ohata Member, IEEE

Page 1313.

Abstract:

This paper describes design consideration and performance of a Ka-band monolithic phase shifter utilizing nonresonant FET switches. The switches show broad-band on/off characteristics up to 60 GHz without using inductors; thus, robust circuit design is possible for a switched-line phase shifter. To determine circuit topology, we introduce a schematic design approach. As a result, desired phase shift as well as good matching characteristics can be realized. The developed 4-bit monolithic phase shifter demonstrates an overall phase deviation less than 5° rms and an insertion loss variation less than 0.65 dB rms from 33 to 35 GHz. For all 16 states, the insertion loss is measured to be 13.1± 1.1 dB and the VSWR is less than 1.6. The chip size of the monolithic phase shifter is 2.5 mm × 2.2 mm.

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