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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 8, August 2000

Table of Contents for this issue

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A 500-mW High-Efficiency Si MOS MMIC Amplifier for 900-MHz-Band Use

Noriaki Matsuno, Hitoshi Yano, Yasuyuki Suzuki, Toshiro Watanabe, Shigeki Tsubaki, Tetsu Toda and Kazuhiko Honjo

Page 1407.

Abstract:

A 500-mW monolithic-microwave integrated-circuit (MMIC) amplifier using a 0.6-µm Si MOSFET for 900-MHz-band use has been developed. The input matching network, which consists of a spiral inductor and an MOS capacitor, was integrated onto the chip using a low-cost mass-production large-scale-integration process. A new spiral-inductor model,taking into account the dielectric loss and skin effect of the Si substrate,was introduced. We analyzed the stability and gain dependence on the gate structure of the MOSFET and optimized the gate finger length and the loss of the matching network to achieve high gain and stability. The fabricated MMIC amplifier achieved a linear gain of 15.2 dB and an output power of 27.1 dBm with a PAE of 60% under a supply voltage of 4.8 V.

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