2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 9, September 2000

Table of Contents for this issue

Complete paper in PDF format

Improved Microwave Performance on Low-Resistivity Si Substrates by Si+ Ion Implantation

Pin-Quan Chen and Yi-Jen Chan

Page 1582.

Abstract:

Microwave characteristics of spiral inductors on low-resistivity Si substrates have been improved by implanting Si+28 ions. Spiral inductors fabricated on these implanted substrates demonstrate better Q-value and microwave performance. The Q-value of inductor enhanced 60% on the implanted substrates than that of low-resistivity Si substrates. An equivalent circuit model of inductor has been evaluated to discuss the effect of substrate loss.

References

  1. C. P. Yue and S. S. Wong, "On-chip spiral inductors with patterned ground shields for Si-based RF IC's", IEEE J. Solid-State Circuits, vol.  33, pp.  85-86, Jan.  1998.
  2. M. Soyuer, J. N. Burghartz, K. A. Jenkins and S. Ponnapalli, "Multilevel monolithic inductors in silicon technology", Electron. Lett., vol. 31, pp.  359-360, 1995.
  3. J. N. Burghartz, M. Soyuer and K. A. Jenkins, "Microwave inductors and capacitors in standard multilevel interconnect silicon technology", IEEE Trans. Microwave Theory Tech., vol. 44, pp.  100-104, Jan.  1996.
  4. J. N. Burghartz, M. Soyuer, K. A. Jenkins and M. D. Hulvey, "High-Q inductor in standard silicon interconnect technology and its application to an integrated RF power amplifier", in Int. Electron Devices Meeting Tech. Dig. , 1995, pp.  1015-1017. 
  5. R. B. Merrill, T. W. Lee, H. You, R. Rasmussen and L. A. Moberly, "Optimization of high-Q integrated inductors for multi-level metal MOS", in Int. Electron Devices Meeting Tech. Dig., 1995, pp.  983-986. 
  6. B. K. Kim, B. K. Ko and K. Lee, "Monolithic planar inductor and waveguide structure on silicon with performance comparable to those in GaAs MMIC", in Int. Electron Devices Meeting Tech. Dig., 1995, pp.  712-720. 
  7. C. P. Liao, T. H. Huang, C. Y. Lee, D. Tang, S. Ming, T. N. Yang and L. F. Lin, "Method of creating local semi-insulating regions on silicon wafers for device isolation and realization of high-Q inductors", IEEE Electron Device Lett., vol. 19, pp.  461-462, 1998.
  8. S. Chaki, S. Aono, N. Andoh, Y. Sasaki, N. Tanino and O. Ishihara, "Experimental study on spiral inductors", in IEEE MTT-S Int. Microwave Symp. Dig., 1995, pp.  753-756.