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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 12, December 2000

Table of Contents for this issue

Complete paper in PDF format

Bias-Dependent Linear Scalable Millimeter-Wave FET Model

John Wood, Member, IEEE and David E. Root Member, IEEE

Page 2352.

Abstract:

This paper describes a measurement-based bias-dependent linear equivalent circuit field-effect-transistor/high-electron-mobility-transistor model that is accurate to at least 100 GHz and scalable up to 12 parallel gate fingers and from 100 to 1000 µm total gate width. A new and accurate technique for extracting the Z-shell parameters has been developed, and the scaling rules for all the parasitic elements have been determined. The intrinsic equivalent circuit element values are determined at each bias point in Vgs-Vds space and interpolated by splines between points.

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