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IEEE Transactions on Microwave Theory and Techniques
Volume 48 Number 12, December 2000

Table of Contents for this issue

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Temperature-Dependent Small-Signal and Noise Parameter Measurements and Modeling on InP HEMTs

M. R. Murti, J. Laskar, Member, IEEE S. Nuttinck, S. Yoo, A. Raghavan, J. I. Bergman, J. Bautista, R. Lai, R. Grundbacher, M. Barsky, P. Chin and P. H. Liu

Page 2579.

Abstract:

In this paper, we present detailed on-wafer S -parameter and noise parameter measurements and modeling of InP/InAlAs/InGaAs high electron mobility transistors (0.1-µ m gate length) at cryogenic temperatures. Various physical effects influencing small-signal parameters, especially the radio-frequency (RF) transconductance and RF output resistance and their temperature dependence,are discussed in detail. Accurate on-wafer noise parameter measurements are carried out from 300 to 18 K, and the variation of the equivalent noise temperatures of drain and source (Td and Tg) are modeled against temperature. Based on these models,a cryogenic low-noise amplifier in the Ka-band is developed with a record-low noise temperature of 10 K.

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